FLIP-CHIP INALAS INGAAS SUPERLATTICE AVALANCHE PHOTODIODES WITH BACK-ILLUMINATED STRUCTURES/

A transparent InAIAs/InGaAs superlattice (SL) multiplication layer at a wavelength of 1.55 mu m was realized by using quantum-size effect. U sing this SL, flip-chip separate absorption and multiplication InAlAs/ InGaAs SL avalanche photodiodes with back-illuminated structures were demonstrated. A dark current lower than 2 mu A at a multiplication fac tor of 10, a large gain-bandwidth product of 110 GHz, and a wide bandw idth of 12 GHz were obtained at the wavelength of 1.55 mu m. (C) 1994 John Wiley and Sons, Inc.