S. Hanatani et al., FLIP-CHIP INALAS INGAAS SUPERLATTICE AVALANCHE PHOTODIODES WITH BACK-ILLUMINATED STRUCTURES/, Microwave and optical technology letters, 7(3), 1994, pp. 103-107
A transparent InAIAs/InGaAs superlattice (SL) multiplication layer at
a wavelength of 1.55 mu m was realized by using quantum-size effect. U
sing this SL, flip-chip separate absorption and multiplication InAlAs/
InGaAs SL avalanche photodiodes with back-illuminated structures were
demonstrated. A dark current lower than 2 mu A at a multiplication fac
tor of 10, a large gain-bandwidth product of 110 GHz, and a wide bandw
idth of 12 GHz were obtained at the wavelength of 1.55 mu m. (C) 1994
John Wiley and Sons, Inc.