INP-BASED LASERS ON SI SUBSTRATES WITH MICROCLEAVED MIRRORS

Authors
SUGO M MORI H ITOH Y TACHIKAWA M SAKAI Y
Citation
M. Sugo et al., INP-BASED LASERS ON SI SUBSTRATES WITH MICROCLEAVED MIRRORS, Microwave and optical technology letters, 7(3), 1994, pp. 143-145
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
7
Issue
3
Year of publication
1994
Pages
143 - 145
Database
ISI
SICI code
0895-2477(1994)7:3<143:ILOSSW>2.0.ZU;2-A
Abstract
An InP-based multiple quantum-well laser diode on a Si substrate with microcleaved mirrors exhibits cw operation at room temperature. Microc leaved mirrors can be fabricated without having to cleave a Si substra te. The laser emits at a 1.54-mu m wavelength and exhibits stable oper ation even after more than 1000 hours. (C) 1994 John Wiley and Sons, I nc.