HIGH-EFFICIENCY INGAAS INGAASP COMPRESSIVELY STRAINED MULTIPLE-QUANTUM-WELL LASER-DIODE/

The characteristics of the InGaAs/InGaAsP compressively strained multi ple-quantum-well laser diodes with thin wells were studied experimenta lly to realize the pumping laser diode for the optical-fiber amplifier . High external quantum efficiency and comparatively low threshold cur rent density were obtained when the thickness of the well was reduced to less than 2 nm. II was also found that the characteristic temperatu re depends only on the optical confinement to the wells when the optic al confinement factor is smaller than 1.5%. Out pur power as high as 2 10 mW was demonstrated in the coated sample with the optimized well st ructure. (C) 1994 John Wiley and Sons, Inc.