FEATURES OF THE TRANSPORT PHENOMENA AND TEMPERATURE-DEPENDENCE OF THEGAMMA-6-GAMMA-8 ENERGY-GAP IN UNDOPED ZERO-GAP N-(CD, HG)TE CRYSTALS

Authors
KOMIRENKO SM
Citation
Sm. Komirenko, FEATURES OF THE TRANSPORT PHENOMENA AND TEMPERATURE-DEPENDENCE OF THEGAMMA-6-GAMMA-8 ENERGY-GAP IN UNDOPED ZERO-GAP N-(CD, HG)TE CRYSTALS, Semiconductor science and technology, 9(1), 1994, pp. 19-25
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
1
Year of publication
1994
Pages
19 - 25
Database
ISI
SICI code
0268-1242(1994)9:1<19:FOTTPA>2.0.ZU;2-R
Abstract
A self-consistent calculation procedure of the temperature dependences of the Gamma(6)-Gamma(8) energy gap (E(g)) and charge carrier mobilit y is proposed for undoped Hg1-xCdxTe real crystals (x similar to 0.1). It is shown that, in combination with methods of direct determination of E(g), this method may be used later for investigation of the elect ron density of states in the T-8 band degeneration region of zero-gap semiconductors. The mobility was calculated assuming a fourfold degene rate acceptor level in the conduction band with energy determined taki ng into account the features of the dielectric function under conditio ns of dynamic screening.