A BISTABLE RESONANT-TUNNELING HOT-ELECTRON INFRARED PHOTOTRANSISTOR

Authors
RYZHII V
Citation
V. Ryzhii, A BISTABLE RESONANT-TUNNELING HOT-ELECTRON INFRARED PHOTOTRANSISTOR, Semiconductor science and technology, 9(1), 1994, pp. 26-29
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
1
Year of publication
1994
Pages
26 - 29
Database
ISI
SICI code
0268-1242(1994)9:1<26:ABRHIP>2.0.ZU;2-Y
Abstract
A resonant-tunnelling hot-electron phototransistor (RTHEPT) utilizing intraband absorption of radiation is reported. The mechanism of operat ion is the resonant-tunnelling process controlled by electron photoemi ssion from the base into the collector. The photoelectric performance of the RTHEPT is evaluated using an analytical model. It is shown that the RTHEPT exhibits optical bistability. RTHEPTs can be used as optoe lectronic switching devices and photodetectors for infrared radiation.