TECHNOLOGICAL ASPECTS OF THE PREPARATION OF AU-ZN OHMIC CONTACTS TO P-TYPE INP

Authors
MALINA V SCHADE U VOGEL K
Citation
V. Malina et al., TECHNOLOGICAL ASPECTS OF THE PREPARATION OF AU-ZN OHMIC CONTACTS TO P-TYPE INP, Semiconductor science and technology, 9(1), 1994, pp. 49-53
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
1
Year of publication
1994
Pages
49 - 53
Database
ISI
SICI code
0268-1242(1994)9:1<49:TAOTPO>2.0.ZU;2-9
Abstract
Au-Zn/Au and X/Au-Zn/Y/Au metallizations (where X = Au, Cr or Ni is a nucleation layer and Y = Cr or Ni is a diffusion barrier), formed by v acuum evaporation of Au-Zn (10 wt%) alloy, were studied for the prepar ation of ohmic contacts to p-type InP. The metallurgical and electrica l properties of such contacts were investigated as a function of depos ition parameters (especially the deposition rate of Au-Zn alloy) and a lloying conditions. The role of the nucleation layer X on the InP surf ace and of the barrier layer Y between the Au-Zn and the outer Au laye r in contact formation is also discussed.