2D CHANNEL TRANSPORT OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON NARROW-GAP HG1-XCDXTE (0.2-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.3)

The inversion channel of metal-insulator (Al2O3) semiconductor (p-Hg1- xCdxTe) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measuremen ts. Observation of the SdH effect enables us to determine the dielectr ic constant of the oxide (epsilon(r) = 10.9 +/- 1.0) and provides evid ence of two occupied subbands (i = 0, 1) with an effective electron ma ss ratio m(0)/m(1) similar or equal to 2. From tilted magnetic field e xperiments an enhanced effective g-factor g(x = 0.3) = -65 in the low est Landau level of the lowest subband was estimated. The maximum chan nel mobility mu(max)(4.2 K) = 3000 cm(2) V-1 s(-1) is limited by alloy inhomogeneities and interface roughness.