CONTACTLESS LOCAL DETERMINATION OF RECOMBINATION CENTER PARAMETERS INCD0.3HG0.7TE BY INFRARED-LASER INTERFEROMETRY

Authors
FEDORTSOV AB LETENKO DG POLYAKOV AY STAFEEV VI VOROBYEV LE
Citation
Ab. Fedortsov et al., CONTACTLESS LOCAL DETERMINATION OF RECOMBINATION CENTER PARAMETERS INCD0.3HG0.7TE BY INFRARED-LASER INTERFEROMETRY, Semiconductor science and technology, 9(1), 1994, pp. 69-76
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
1
Year of publication
1994
Pages
69 - 76
Database
ISI
SICI code
0268-1242(1994)9:1<69:CLDORC>2.0.ZU;2-A
Abstract
We describe a method, and the results thereof, for contactless local d etermination of the excitation energy of recombination centres, their concentration, and the electron and hole capture coefficients in Cd0.3 Hg0.7Te. The method suggested is based on analysis of the experimental temperature dependence of electron and hole lifetimes obtained by inf rared laser interferometry.