ORIENTATION AND PRESSURE-DEPENDENCE OF THE BAND OVERLAP IN INAS GASB STRUCTURES/

The band overlap at the InAs/GaSb interface has been measured using el ectron and hole densities deduced from magnetotransport measurements, combined with self-consistent energy level calculations, for structure s with both [001] and [111]A orientations. This band crossing is found to be 140 meV for the [001] orientation but increases to 200 meV for [111]A. The difference is attributed to the presence of an interface d ipole for [111]A growth. In addition, the band overlap decreases, with applied hydrostatic pressure, at a higher rate for the [111]A orienta tion.