IMPROVED MODULATOR CHARACTERISTICS USING TENSILE STRAIN IN LONG-WAVELENGTH INGAAS INGAASP MULTIPLE-QUANTUM WELLS/

We have measured the field dependent Stark shift and exciton oscillato r strength in tensile strained, compressively strained, and unstrained 1.5 mu m InGaAs/InGaAsP modulator structures. We find that the excito n oscillator strength is much less field dependent for tensile straine d structures, which operate at the light hole transition. We conclude that tensile strained structures should lead to improved modulator per formance.