M. Micovic et al., QUANTUM-WELL LASERS WITH CARBON-DOPED CLADDING LAYERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(4), 1994, pp. 411-413
Data are presented which demonstrate that very high quality carbon (C)
doped epilayers for the fabrication of AlGaAs-GaAs and AlGaAs-GaAs-In
GaAs quantum well (QW) lasers can be grown by solid source molecular b
eam epitaxy (MBE) using a resistively heated graphite filament as a p-
type dopant source. Broad area lasers fabricated from this material ex
hibit very low threshold current densities (66 A/cm(2) for a 2-mm-long
single QW AlGaAs-GaAs-InGaAs laser emitting at 980-nm wavelength). It
is also shown that lasers with carbon doped cladding layers grown on
either n(+) or p(+) substrates exhibit similar low threshold current d
ensities. These C-doped lasers are expected to have improved long term
reliability compared to conventional Be-doped laser structures.