PYROLYTIC LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF AL FROM DIMETHYLETHYLAMINE-ALANE - CHARACTERIZATION AND A NEW 2-STEP WRITING PROCESS

Citation
Js. Han et al., PYROLYTIC LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF AL FROM DIMETHYLETHYLAMINE-ALANE - CHARACTERIZATION AND A NEW 2-STEP WRITING PROCESS, Applied physics letters, 64(4), 1994, pp. 425-427
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
4
Year of publication
1994
Pages
425 - 427
Database
ISI
SICI code
0003-6951(1994)64:4<425:PLCOAF>2.0.ZU;2-T
Abstract
We describe pyrolytic laser assisted chemical vapor deposition of AI f rom dimethylethylamine-alane with 514-nm radiation from an Ar ion lase r. High purity Al lines with resistivity dose to bulk Al are reported for a range of operating conditions. The relationship between operatin g parameters and materials properties of the deposited lines is deline ated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser w riting process. Based on the observed nucleation behavior, we demonstr ate a two-step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the n ucleated pattern.