Js. Han et al., PYROLYTIC LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF AL FROM DIMETHYLETHYLAMINE-ALANE - CHARACTERIZATION AND A NEW 2-STEP WRITING PROCESS, Applied physics letters, 64(4), 1994, pp. 425-427
We describe pyrolytic laser assisted chemical vapor deposition of AI f
rom dimethylethylamine-alane with 514-nm radiation from an Ar ion lase
r. High purity Al lines with resistivity dose to bulk Al are reported
for a range of operating conditions. The relationship between operatin
g parameters and materials properties of the deposited lines is deline
ated. Results from deposition on different substrates, Pt, Au, W, and
Si, provide insight into thermal and nucleation effects in the laser w
riting process. Based on the observed nucleation behavior, we demonstr
ate a two-step fast writing process involving fast laser nucleation of
lines, followed by selective chemical vapor deposition of Al on the n
ucleated pattern.