STRAIN CHARACTERIZATION OF COSI2 N-SI0.9GE0.1/P-SI HETEROSTRUCTURES/

We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-S i heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1-xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional tra nsmission electron microscopy. The results show that in order to keep the strain in Si1-xGex unaffected, a sacrificial Si layer is needed. I t was possible to obtain transistor action, but with low-current gain (beta).