PHOTOCONDUCTIVE PROPERTIES OF THE ER-DOPED INP

The photoconductive properties of Er-doped InP layers prepared by atmo spheric pressure metalorganic vapor phase epitaxy were investigated. T wo Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter tran sition. The 1.27 eV transition is attributed to a free to bound transi tion involving the Er3+-related trapping center. Presumably this trapp ing level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to expla in the photoconductive response of the Er-doped materials.