GAAS ALAS TRENCH-BURIED QUANTUM WIRES WITH NEARLY RECTANGULAR CROSS-SECTIONS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON V-GROOVED SUBSTRATES/

GaAs trench-buried quantum wires were fabricated by using V-grooved Al As trenches grown on V-grooved (001) substrates. These trench structur es with vertical (110) sidewalls were formed by the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron microscope image of these trench-buried structures showed GaAs wires about 20 nm wide and 20 nm thick. The growth of these wires is enhanced by the capture of Ga species into the trenches. Blueshifts and strong anisotropy of p hotoluminescence confirm two-dimensional quantum confinement.