STATE HOLDING CIRCUIT USING HETEROJUNCTION BIPOLAR-TRANSISTORS AND RESONANT-TUNNELING DIODES

Authors
YANG YF WANG WI YANG ES
Citation
Yf. Yang et al., STATE HOLDING CIRCUIT USING HETEROJUNCTION BIPOLAR-TRANSISTORS AND RESONANT-TUNNELING DIODES, Electronics Letters, 30(1), 1994, pp. 90-92
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
1
Year of publication
1994
Pages
90 - 92
Database
ISI
SICI code
0013-5194(1994)30:1<90:SHCUHB>2.0.ZU;2-H
Abstract
A state holding circuit, similar to the Muller C-element used as a lat ch, a register or a counter, has been successfully fabricated using Ga As/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Usin g the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits.