T. Unold et Jd. Cohen, ELECTRONIC MOBILITY GAP STRUCTURE AND THE NATURE OF DEEP DEFECTS IN AMORPHOUS-SILICON GERMANIUM ALLOYS GROWN BY PHOTO-CVD, Journal of non-crystalline solids, 166, 1993, pp. 23-26
Amorphous hydrogenated silicon-germanium alloys grown by photo-CVD hav
e been studied using a variety of steady-state and transient junction-
capacitance techniques. The dependence of the electronic mobility gap
structure, the density of deep defects, and the carrier trapping prope
rties on the germanium content has been investigated systematically. T
he Urbach tail slope is found to be nearly constant over the whole all
oy range. The dominant defect band is found to track the midgap energy
position, and the density of deep defects increases exponentially wit
h increasing germanium content. These results are fully consistent wit
h weak bond breaking theories and suggest that the quality of amorphou
s silicon-germanium alloys and a-Ge:H is inherently inferior to pure a
-Si:H materials.