FABRICATION OF AMORPHOUS-SILICON MATERIALS AND SOLAR-CELLS AT HIGH-TEMPERATURES USING ECR DEPOSITION TECHNIQUES

We report on the preparation and properties of a-Si:H films and p-i-n devices produced using a remote-electron-cyclotron-resonance depositio n at high temperatures (350-400C). The films are electronic quality, w ith significantly improved stability compared to standard glow-dischar ge-deposited films. The bandgap and H content of the films depend crit ically upon which gas is used as the primary plasma gas, We have also made devices in these new materials,deposited on tin-oxide substrates, and they are also of good quality.