EFFECT OF DEPOSITION TEMPERATURE ON DISORDER IN INP

Stoichiometric films of InP have been prepared by rf sputtering over a wide range of substrate temperature T-S. The structural and optical p roperties of these films have been investigated using several experime ntal techniques. For T-S less than or equal to 100 degrees C TEM revea ls that the structure consists of an amorphous network which is shown by EXAFS, optical and XPS data to be largely chemically ordered with f ew wrong bonds present. For T-S greater than or equal to 100 degrees C the structure consists of nanocrystals, embedded in an amorphous netw ork, which increase in size with T-S. The decrease in bond angle disor der with increase in T-S has been quantified by both EXAFS and XPS.