ISOLATING THE RATE OF LIGHT-INDUCED ANNEALING OF THE DANGLING-BOND DEFECTS IN A-SI-H

Authors
GLESKOVA H BULLOCK JN WAGNER S
Citation
H. Gleskova et al., ISOLATING THE RATE OF LIGHT-INDUCED ANNEALING OF THE DANGLING-BOND DEFECTS IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 183-186
Citations number
10
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
183 - 186
Database
ISI
SICI code
0022-3093(1993)166:<183:ITROLA>2.0.ZU;2-U
Abstract
The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperatu re of 125 degrees C are presented. The rate of removal of the metastab le defects and the final steady-state defect density both increase wit h light intensity. The functional dependence of the light-induced anne aling term on the light intensity, or carrier generation rate G, is pr oportional to G(0.66-0.84), and thus is proportional to the density of the photo-generated carriers.