THE PRESENCE OF DIFFERENT KINDS OF DANGLING BONDS AND THEIR LIGHT-INDUCED CREATION IN A-SI-H

ESR spectra of dangling bonds in a-Si:H are deconvoluted into two comp onents due to normal dangling bonds and H-related dangling bonds. For glow discharge samples prepared at 100 degrees C, the normal dangling bond constitutes about 60% of the total spin density, while the H-rela ted dangling bond gives about 40%. The samples were also illuminated b y a xenon lamp with 600mW/cm(2) at room temperature. Two kinds of dang ling bonds are created almost equally by illumination.