PULSED RUBY-LASER ACCELERATED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

We introduce the pulsed ruby laser as a new tool for homogeneous accel erated degradation of a-Si:H and discuss in detail the sample temperat ure during the ruby pulse and the value of the saturated density of st ates (DOS), achieved by this laser. The degradation dynamics and the s aturated values of the DOS and electrical room temperature conductivit y (sigma(RT)) are presented on a set of different undoped a-Si:H sampl es. It is illustrated that there is no correlation between the initial and light-saturated DOS, which is determined in addition to the H con tent and the a-Si:H microstructure indirectly also by impurities.