K. Zellama et al., EXPERIMENTAL-STUDY OF DISORDER AND DEFECTS IN UNDOPED A-SI-H AS A FUNCTION OF ANNEALING AND HYDROGEN EVOLUTION, Journal of non-crystalline solids, 166, 1993, pp. 285-288
Information on the incorporation of hydrogen and its effects on the di
sorder and the defects in undoped PECVD a-Si:H films deposited under d
ifferent conditions is gained from systematic annealing studies up to
500-600 degrees C. The results reveal a better bonded hydrogen stabili
ty in the samples deposited at high rate, related to their particular
microstructure.