MODELING OF HYDROGEN CENTERS IN SILICON AND ITS OXIDES BY MUON IMPLANTATION

A study has been carried out of the hydrogen sites in amorphous silico n a-Si, a-Si:H and its monoxide a-SiO using the technique of MuSR. The existence of H at the tetrahedral interstitial and bond-centre sites have been confirmed by the identification of the analogous centres Mu' and Mu. However, the larger fraction of hydrogen prefers the formati on of the Si-H complex. The Mu state appears to survive to higher tem peratures than in c-Si.