HYDROGEN DIFFUSION IN A-SI-H A-SI STRUCTURE UNDER ELECTRICAL BIAS/

By using the technique of elastic recoil detection (ERD), we have meas ured the hydrogen profiles in a-Si:H/a-Si structure samples annealed a t various temperatures with and without electrical bias, and investiga ted the influence of electrical bias on hydrogen diffusion. The result s show that hydrogen diffusion in a-Si is significantly enhanced by th e action of electrical bias. The existence of the excess carriers, whi ch are introduced by electrical injection, is considered to be respons ible for the enhancement of hydrogen diffusion, and the microprocess o f hydrogen transport has been exploited.