PHOTOCARRIER DRIFT AND RECOMBINATION IN A-SI-H - THE VITAL IMPORTANCEOF DEFECT RELAXATION

A model for steady-state and transient photoconductivity incorporating slow atomic relaxation effects for an electron trap is presented. Rel axation effects of this type were recently proposed to account for tra nsient capacitance measurements in a-Si:H. The model accounts for the typical power-law dependence of the steady-state photocurrent upon ill umination rate observed in a-Si:H, and is consistent with most feature s of transient photocurrent measurements measured under optical bias.