STEADY-STATE OPTICAL MODULATION SPECTROSCOPY OF B2H6-DOPED A-SI-H

Citation
H. Herremans et al., STEADY-STATE OPTICAL MODULATION SPECTROSCOPY OF B2H6-DOPED A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 347-350
Citations number
10
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
347 - 350
Database
ISI
SICI code
0022-3093(1993)166:<347:SOMSOB>2.0.ZU;2-S
Abstract
We studied a series of boron-doped a-Si:B through optical modulation s pectroscopy (OMS) at room temperature and at T=20 K. The differences w ith intrinsic a-Si:H spectra are associated with the dopant (B) atoms which give rise to acceptor states in the valence band tail. A model f or analysis of the OMS spectra is described. Results of fittings using this model are presented.