We studied a series of boron-doped a-Si:B through optical modulation s
pectroscopy (OMS) at room temperature and at T=20 K. The differences w
ith intrinsic a-Si:H spectra are associated with the dopant (B) atoms
which give rise to acceptor states in the valence band tail. A model f
or analysis of the OMS spectra is described. Results of fittings using
this model are presented.