OPTICAL-ABSORPTION OF HIGH-QUALITY A-SI-H AND A-SIXN1-X-H IN THE LOW-ENERGY REGION 0.43 EV APPROXIMATE-TO-1.5 EV BY PDS

Authors
NONOMURA S NISHIWAKI T KUSAKABE S NISHIMURA E ITOH T NITTA S
Citation
S. Nonomura et al., OPTICAL-ABSORPTION OF HIGH-QUALITY A-SI-H AND A-SIXN1-X-H IN THE LOW-ENERGY REGION 0.43 EV APPROXIMATE-TO-1.5 EV BY PDS, Journal of non-crystalline solids, 166, 1993, pp. 359-362
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
359 - 362
Database
ISI
SICI code
0022-3093(1993)166:<359:OOHAAA>2.0.ZU;2-T
Abstract
Absorption coefficient spectra by PDS have been examined in a-Si:H and a-SiXN1-X:H. The contribution of absorption by some kinds of substrat es are shown in PDS spectrum in a-Si:H with low defect density. In the condition free from substrate absorption, the effect of thermal annea ling below the deposition temperature and addition of nitrogens to Si are demonstrated.