LIGHT-INDUCED DEFECTS IN A-SI-H

The light-induced defect density, the Urbach parameter and the Fermi l evel shift depending on its initial position have been investigated. T he a-Si:H films were deposited using a triode glow discharge technique to control the epsilon(F) without any doping (epsilon(C) - epsilon(F) = 0.44 - 0.92 eV), i.e. any possible light-induced defect-dopant inte ractions were eliminated. The results obtained seem not to be in line with models based on an extrinsic origin of the defects in a-Si:H.