THE DEPENDENCIES OF THE 2 CARRIER MOBILITY-LIFETIME PRODUCTS ON THE POSITION OF THE FERMI-LEVEL IN A-SI-H

In this presentation we report results obtained by the first combined application of the Metal Oxide Semiconductor and the Photocarrier Grat ing configurations. This combination enabled the first simultaneous st udy of the mobility-lifetime products of the two carriers and their li ght intensity exponents as a function of the position of the Fermi lev el, in undoped a-Si:H. We found that anticorrelations and correlations prevail between these two sets of quantities. The conclusion we deriv e from these behaviors is that the ''defect pool'' model accounts for the phototransport data much better than any other model.