IN SEARCH OF A NORMAL HALL-EFFECT IN AMORPHOUS-SILICON

Authors
Citation
By. Tong et J. Du, IN SEARCH OF A NORMAL HALL-EFFECT IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 453-456
Citations number
21
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
453 - 456
Database
ISI
SICI code
0022-3093(1993)166:<453:ISOANH>2.0.ZU;2-O
Abstract
For twenty years it has been believed that the double sign anomaly in Hall measurements is always observed in amorphous silicon. Theory does not exclude the possibility of finding the expected sign in Hall meas urements (normal Hall effect). Here, we describe how this material was found.