RANDOM TELEGRAPHIC NOISE IN A-SI1-XCX-H SCHOTTKY BARRIERS

Random telegraphic noise (RTN) was observed in a-Si1-xCx:H Schottky ba rriers which were investigated in the temperature range from 23 to 300 K. Switching times down to the order of 10 mu s and resistance fluctu ations up to 20 % were found. Also a voltage induced forming of the sa mples and a temperature dependent probability of appearance of RTN wer e observed. Physical mechanisms are discussed, elementary calculations performed, and energetic and local positions of the traps involved ar e estimated.