STUDY OF THE TEMPERATURE AND FIELD-DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN A-SIL-XCX-H USING THE TIME-OF-FLIGHT TECHNIQUE

The time-of-flight transient photoconductivity experiment has been use d to investigate electronic transport in hydrogenated amorphous silico n carbide. The samples in the present study were deposited in the low power regime with carbon contents below x = 0.1. Results show that ele ctron transport is anomalously dispersive at low temperatures, as also observed in a-Si:H. The extended state mobility for these materials w as estimated to be between 1 and 10 cm(2)V(-1)s(-1) and mobility activ ation energies at low fields indicate that significant trapping occurs further from the conduction band edge with increasing carbon concentr ation. DOS profiles are derived directly from the experimental data.