EXPERIMENTAL DARK DISCHARGE OF A-SI1-CHI-C-CHI-H FILMS AND ITS COMPARISON TO MONTE-CARLO SIMULATIONS

Dark discharge curves of a-Si1-xCx:H films of varying thickness have b een analyzed by comparing them to results of Monte Carlo simulations. In the simulations charge carrier transport was governed by the self i nduced field and a rectangular defect state distribution in the band g ap. Results indicate that the discharge is determined by surface charg e injection at the beginning of the discharge. However, at longer time s bulk generation becomes increasingly important.