TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA AND MODEL OF SELF-TRAPPING OF HOLES IN A-SI-H

Authors
MORIGAKI K YAMAGUCHI M HIRABAYASHI I
Citation
K. Morigaki et al., TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA AND MODEL OF SELF-TRAPPING OF HOLES IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 571-574
Citations number
14
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
571 - 574
Database
ISI
SICI code
0022-3093(1993)166:<571:TOPSAM>2.0.ZU;2-0
Abstract
The temperature dependence of photoluminescence spectra in a-Si:H is c onsidered in terms of the self-trapping of holes at low temperatures. The temperature variation of the peak energy below 100 K is consistent with the temperature shift of the self-trapped hole level with respec t to the edge of valence band estimated from photoinduced absorption m easurements.