EFFECT OF LIGHT-INDUCED DEGRADATION ON PHOTOCONDUCTIVE GAIN IN A-SI-HN-I-P DEVICES

Authors
VANDERHAGHEN R AMOKRANE R HAN DX SILVER M
Citation
R. Vanderhaghen et al., EFFECT OF LIGHT-INDUCED DEGRADATION ON PHOTOCONDUCTIVE GAIN IN A-SI-HN-I-P DEVICES, Journal of non-crystalline solids, 166, 1993, pp. 599-602
Citations number
7
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
599 - 602
Database
ISI
SICI code
0022-3093(1993)166:<599:EOLDOP>2.0.ZU;2-R
Abstract
We have studied the effect of photodegradation on the forward bias pho to-gain in a-Si:H n-i-p devices. Annealed samples show both mono-molec ular and bi-molecular recombination as a function of forward bias and light intensity. However, after degradation, under our conditions we f ind only mono-molecular recombination. The degradation of the photo-ga in follows the law G(ph) proportional to 1/t(1/3). Data and a simplifi ed model are presented.