PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H AND THE EFFECT OF BIAS LIGHT ON THE DRIFT MOBILITY

Authors
TZANETAKIS P FRITZSCHE H TRAN MQ ANDROULIDAKI M RYNES E
Citation
P. Tzanetakis et al., PHOTOCONDUCTIVITY IN COMPENSATED A-SI-H AND THE EFFECT OF BIAS LIGHT ON THE DRIFT MOBILITY, Journal of non-crystalline solids, 166, 1993, pp. 607-610
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
166
Year of publication
1993
Part
1
Pages
607 - 610
Database
ISI
SICI code
0022-3093(1993)166:<607:PICAAT>2.0.ZU;2-8
Abstract
We measured the photoconductivity sigma(p) of compensated hydrogenated amorphous silicon (a-Si:H) between 4.2 and 400K. The PH3/SiH4 = B2H6/ SiH4 doping ratios ranged from 2.5 x 10(-6) to 10(-2). Potential fluct uations strongly degrade sigma(p). Subgap absorption and defect concen tration are unreliable indicators for material quality. The drift mobi lity obtained from the initial decay of sigma(p) was found to increase at surprisingly small bias light intensities.