ON THE NATURE OF PHOTOINDUCED DEFECTS AND RECOMBINATION MECHANISMS INLIGHT-SOAKED A-SI-H FILMS

Results of measurements of the temperature dependence of the photocond uctivity and intensity-current characteristics of undoped a-Si:H films light-soaked at various temperatures are presented. The observations support the assumption of the introduction of tau-centers in addition of the conventional dangling bonds playing an important role in the re combination. The electronic energy spectrum and recombination properti es of intimate dangling-bond pairs are discussed and it is argued that such complexes may be the tau-centers introduced at light soaking.