SUPERLATTICES OF THE GE-GE1-XSIX TYPE FABRICATED BY THE HYDRIDE METHOD

Citation
Oa. Kuznetsov et al., SUPERLATTICES OF THE GE-GE1-XSIX TYPE FABRICATED BY THE HYDRIDE METHOD, Semiconductors, 27(10), 1993, pp. 878-883
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
10
Year of publication
1993
Pages
878 - 883
Database
ISI
SICI code
1063-7826(1993)27:10<878:SOTGTF>2.0.ZU;2-4
Abstract
Cross sections of a stressed Ge-Ge1-xSix superlattice, grown by the hy dride method, were studied for the first time by the method of transmi ssion electron microscopy. The nature of the distribution of defects w hich relieved the elastic effects of the Ge substrate on the periodic structure was determined. X-ray diffraction was used in a study of the dependence of the elastic accommodation in the heterojunction layers on their composition and thickness. The elastic stresses in the surfac e layers of the superlattice had a significant influence on the electr oreflection spectra of visible light: they shifted and split the spect ral lines. The high quality of these superlattices made it possible to observe (again for the first time) doublets in the Raman light-scatte ring spectra.