INFLUENCE OF GALLIUM ON THE LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRAOF DIFFUSION-DOPED CADMIUM TELLURIDE

A study was made of the influence of the gallium impurity on the low-t emperature luminescence of p-type CdTe doped by diffusion from the mel t at 550 degrees C. Annealing caused gallium to penetrate into a cryst al, where it interacted with residual group I impurities (Cu and Li) a nd displaced them from the Cu-Cd and Li-Cd site positions to interstic es, and also manifested donor properties in the Ga-Cd position. Outdif fusion of tellurium from the sample reduced the concentration of cadmi um vacancies V-Cd and thus reduced the concentration of Ga-Cd donors, which prevented the p-->n transformation of the conduction type in the surface layers.