POLARIZATION PHOTOSENSITIVITY OF EPITAXIAL GAP STRUCTURES ON SI SUBSTRATES

An experimental investigation was made of the polarization photosensit ivity of pn-GaP/n-Si and p-GaP/n-Si structures formed by epitaxial gro wth of gallium phosphide films on silicon substrates. These structures exhibited a photosensitivity in different spectral ranges. A polariza tion photosensitivity was observed when linearly polarized light was i ncident obliquely on the surface of GaP/Si structures. The photopleoch roism coefficient of these structures was governed by the angle of inc idence Theta. The photopleochroism rose proportionately to Theta(2) an d its maximum value was similar to 50% at Theta approximate to 80 degr ees. Structures consisting of GaP films on Si should find applications as polarimetric photodetectors.