Vn. Babentsov et al., MECHANISMS OF FORMATION OF A DISTURBED LAYER IN P-TYPE CDTE UNDER THEACTION OF NANOSECOND LASER-PULSES, Semiconductors, 27(10), 1993, pp. 894-896
The low-temperature photoluminescence spectra were determined before a
nd after exposure of p-type CdTe to nanosecond ruby laser pulses of po
wer density below that needed to melt the material. An increase in the
laser radiation dose resulted in accumulation of mechanical stresses
in the surface layers and when the plasticity threshold of the crystal
was reached, a dislocation network was formed and it facilitated stre
ss relaxation.