MECHANISMS OF FORMATION OF A DISTURBED LAYER IN P-TYPE CDTE UNDER THEACTION OF NANOSECOND LASER-PULSES

Citation
Vn. Babentsov et al., MECHANISMS OF FORMATION OF A DISTURBED LAYER IN P-TYPE CDTE UNDER THEACTION OF NANOSECOND LASER-PULSES, Semiconductors, 27(10), 1993, pp. 894-896
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
10
Year of publication
1993
Pages
894 - 896
Database
ISI
SICI code
1063-7826(1993)27:10<894:MOFOAD>2.0.ZU;2-N
Abstract
The low-temperature photoluminescence spectra were determined before a nd after exposure of p-type CdTe to nanosecond ruby laser pulses of po wer density below that needed to melt the material. An increase in the laser radiation dose resulted in accumulation of mechanical stresses in the surface layers and when the plasticity threshold of the crystal was reached, a dislocation network was formed and it facilitated stre ss relaxation.