ENHANCEMENT OF THE INDUCED PHOTOPLEOCHROISM IN P-N-GAP P-SI STRUCTURES/

The photosensitivity of pn-GaP/p-Si structures containing two energy b arriers connected in opposition was determined experimentally. Oblique ly incident linearly polarized radiation gave rise to a polarimetric e ffect which was controlled by the angle of incidence. Polarization-inv ersion of the sign of the photocurrent was detected: it depended on th e angle of incidence, the azimuthal angle, and the energy of incident photons of linearly polarized light. Enhancement of the induced photop leochroism was observed in the vicinity of the point of inversion of t he sign of the photocurrent. The results indicated that such structure s could be used in photoanalyzers of linearly polarized light.