INFLUENCE OF THE DOPANT CONCENTRATION AND TEMPERATURE ON THE STAEBLER-WRONSKI EFFECT IN PHOSPHORUS-DOPED A-SI-H FILMS

The influence of prolonged illumination on the conductivity and photoc onductivity of a-Si:H films with different phosphorus dopant concentra tions was investigated at temperatures 300-450 K. The nonmonotonic dep endences of the conductivity on the duration of illumination varied wi th the dopant concentration and with the illumination temperature. The photoconductivity fell as a result of short illumination, but increas ed when the illumination process was long. Typical annealing temperatu res of the positive and negative components of the conductivity were d ifferent. The results were explained by the occurrence of two processe s during illumination. An analysis was made of the possible mechanisms that could increase the conductivity during illumination and were ass ociated with an increase in the doping efficiency.