CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/

Authors
GARBUZOV DZ GULAKOV AB KOCHNEV IV SHERNYAKOV YM KHALFIN VB YAVICH BS
Citation
Dz. Garbuzov et al., CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/, Semiconductors, 27(10), 1993, pp. 946-949
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
10
Year of publication
1993
Pages
946 - 949
Database
ISI
SICI code
1063-7826(1993)27:10<946:COTEDO>2.0.ZU;2-P
Abstract
An investigation was made of the dependence of the efficiency of spont aneous emission from the active region and barrier layers on the curre nt density in AlGaAs/GaAs quantum-well laser diodes. The main reasons for the increase in the threshold current density and reduction in the differential efficiency of laser diodes characterized by large output losses were an increase in the proportion of nonequilibrium carriers recombining in the waveguide layers and the process of electron leakag e to the p-type emitter.