Dz. Garbuzov et al., CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/, Semiconductors, 27(10), 1993, pp. 946-949
An investigation was made of the dependence of the efficiency of spont
aneous emission from the active region and barrier layers on the curre
nt density in AlGaAs/GaAs quantum-well laser diodes. The main reasons
for the increase in the threshold current density and reduction in the
differential efficiency of laser diodes characterized by large output
losses were an increase in the proportion of nonequilibrium carriers
recombining in the waveguide layers and the process of electron leakag
e to the p-type emitter.