ALTERNATIVE SINGLE-SOURCE PRECURSOR FOR GROWTH OF INDIUM PNICTIDE THIN-LAYERS

Novel organometallic precursors for the growth of indium pnictide thin layers are reported. Tributylindium, n-Bu(3)In(1) reacts readily with pnictogen sulfides, As2S3, P2S5 and Sb2S5 to give sulfur-bridged hete ro-binuclear organometallics such as [Bu(2)In(SAsBu)(3)]S-2 (1)(1) [Bu (2)InSP(S)Bu]S-2 (2), and [Bu(2)]InSSb(S)Bu]S-2 (3). They are distilla ble oils which can be pyrolysed to give the corresponding indium pnict ides without sulfur contamination, under an N-2 atmosphere at 500-600 degrees C. Dip-dry pyrolysis of these complexes on an Si(111) substrat e gave high-quality indium pnictide thin films: InAs (mu(300) 1640 cm( -2) V-1 S-1; n(300), 1.3 x 10(14) cm(-3); type, p; T-sub, 600 degrees C)(1) InP (mu(300,) 1100 cm(2) V-1S-1; n(300,)1.2 x 10(19) cm(-3); typ e, p; T-sub, 600 degrees C)(1) and InSb (mu(300) 18 400 cm(2) V-1S-1;n (300,) 6.8 x 10(16) cm(-3); type, p; T-sub 450 degrees C).