METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF YBCO USING A NEW, STABLE AND VOLATILE BARIUM PRECURSOR

A new highly volatile Ba-containing precursor which is thermally stabl e at 1 atm (101325 Pa) pressure is described. This precursor, which is a bis(beta-diketonate) that has only C3F7 as substituent groups and w hich is coordinated with the polyether tetraglyme, is shown to have re producible carry-over rates and to give repeatable deposition rates fo r the chemical vapour deposition (CVD) of highly oriented crystalline BaF2. It has also been shown to be suitable for use in the preparation of superconducting YBCO films. Measurements of thermodynamic and kine tic parameters have been made and are compared with those obtained wit h other Ba-containing precursors. It is concluded that the new Ba-cont aining precursor is potentially a very promising material for the prep aration of superconducting YBCO films.