CARRIER RECOMBINATION IN INDIUM-DOPED HGCDTE(211)B EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

We report the recombination mechanisms of minority carrier lifetime in indium-doped layers of (211)B Hg1-xCdxTe(x approximate to 23.0% +/- 2 .0%)n-type grown by molecular beam epitaxy. Measured lifetimes were ex plained by an Auger limited band-to-band recombination process in this material, even in the extrinsic temperature region. Frequently, in so me of the layers, a combination of the band-to-band recombination mech anisms together with recombination at the Shockley-Read single level 3 3 to 45 meV below the conduction band was necessary to explain the mea sured data. Results indicate that these defects have acceptorlike char acteristics and their origin is related to Hg vacancies.