SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON

Citation
H. Bender et al., SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON, Journal of applied physics, 75(2), 1994, pp. 1207-1209
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
2
Year of publication
1994
Pages
1207 - 1209
Database
ISI
SICI code
0021-8979(1994)75:2<1207:SROHA(>2.0.ZU;2-9
Abstract
The hydrogen termination and surface reconstruction of (100) silicon a nnealed at high temperature in a H-2 atmosphere at 1 bar is investigat ed with multiple internal reflection infrared spectroscopy and atomic force microscopy. The surface flattens and becomes 2 X 1 reconstructed and terminated by strained monohydrides. This surface is shown to be very stable against contamination and oxidation.