HOLE DEFECTS IN MOLECULAR-BEAM EPITAXIALLY GROWN P-GAAS INTRODUCED BYALPHA-IRRADIATION

Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxial ly grown p-GaAs with a free carrier density of 2 X 10(16) cm(-3) were irradiated with alpha particles at room temperature using an americium -241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transien t spectroscopy (DLTS). The introduction rates and DLTS ''signatures'' of three prominent radiation induced defects H alpha 1, H alpha 4, and H alpha 5, situated 0.08, 0.20, and 0.30 eV above the valence band, r espectively, are calculated and compared to those of similar defects i ntroduced during electron irradiation.